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NWFET
Prototyping Atomistic Nanoscale Devices
Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks to Victory Atomistic’s combination of non-equilibrium Green’s functions (NEGF) and state-of-the-art band structure calculations, versatile, predictive, and fast simulations become accessible. To illustrate Victory Atomistic usage, we will use a… Read More »Prototyping Atomistic Nanoscale Devices