Abstract Physics-based design using technology computer-aided design (TCAD) has provided fundamental contributions to R&D in the semiconductor industry. Traditionally, TCAD modeling is mostly developed manually by expert designers using a trial-and-error procedure. However, the imperative… Learn How to Utilize Victory Analytics and Machine Learning to Calibrate TCAD Data
Join us in person at the Synopsys TCAD Winter Reception on December 10, 2024. You have a chance to meet with our executives and product experts to learn about the latest insights on how Synopsys… Synopsys TCAD Winter Reception
Are 2D-TMD-channel transistors suitable candidates for the replacement of silicon ? Considering the extreme scaling down to a few atomic layers of the FET channel, only an atomistic solution looks viable. In this context, we… Learn How to Simulate 2D-TMD-Channel FETs with Atomistic Precision
The common approach to optimize a fabrication process involves process and fab engineers creating and setting up Design of Experiments (DoEs) using a trial-and-error approach. This approach often leads to costly iterations since wafer fabrication… Applying Artificial Intelligence in Fab Technology Co-Optimization
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development in the area of process and device simulation. SISPAD is one of… SISPAD 2024
This webinar presents a comprehensive methodology for the design and optimization of a 1200V Silicon Carbide (SiC) Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (DMOS FET) utilizing Silvaco’s TCAD platform. Adhering to industry best practices, the construction of… Developing Silicon Carbide DMOSFETS: A Digital Twin Design Reference Flow
This webinar presents a comprehensive methodology for the design and optimization of a 1200V Silicon Carbide (SiC) Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (DMOS FET) utilizing Silvaco’s TCAD platform. Adhering to industry best practices, the construction of… Developing Silicon Carbide DMOSFETS: A Digital Twin Reference Flow
We start by examining the different technologies used in the manufacturing of power devices, including Si, GaN, and SiC, considering their respective particularities and advantages. We will then analyze various approaches to the SPICE modeling… Power Devices SPICE Modeling for Si, GaN and SiC Technologies
Silvaco UseRs Global Events (SURGE) bring together users, developers, and industry experts of the EDA, IP, and TCAD communities to understand new semiconductor technologies, innovative applications, and techniques for realizing advanced designs. Presentations A variety… Silvaco UseRs Global Event (SURGE) 2023 – USA
When employing process simulation to generate a complex device structure, TCAD engineers often face the task of reproducing the exact etch profile that has been observed in semiconductor fabrication. Silvaco Victory Process offers several geometric… Learn How to Use Victory Process TCAD Geometric Etch Models in FinFET and Memory Applications