SiC
Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations
Silicon IGBT and SiC MOSFETs are today's key power semiconductor switches for many power electronics converters such as those in automotive, renewables and industrial applications. Both device concepts continue to evolve, and development trends are continuously targeting improved overall electrical and reliability performance at lower costs. In addition to established power device manufacturers, many start-up… Read More »Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations
ISTFA 2023
Phoenix Convention Center 100 North Third Street, Phoenix, AZ, United StatesSaving global resources by increasing energy efficiency is among the most significant problems that global society must address today. To achieve this, a major target is developing efficient and reliable power electronics devices for providing the required high-performing hardware components. Power semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) technologies are becoming increasingly… Read More »ISTFA 2023
Power Devices SPICE Modeling for Si, GaN and SiC Technologies
We start by examining the different technologies used in the manufacturing of power devices, including Si, GaN, and SiC, considering their respective particularities and advantages. We will then analyze various approaches to the SPICE modeling of power devices, including compact models and macromodels. A significant portion of our presentation will be dedicated to the topic… Read More »Power Devices SPICE Modeling for Si, GaN and SiC Technologies
Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices During SiC device switching operations, it is possible that devices could be reaching abnormal overload conditions, which is why some applications require “robustness” specifications (e.g., Short Circuit and UIS… Read More »Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices