ISTFA 2023

Saving global resources by increasing energy efficiency is among the most significant problems that global society must address today. To achieve this, a major target is developing efficient and reliable power electronics devices for providing the required high-performing hardware components. Power semiconductors based on silicon carbide (SiC) and gallium nitride (GaN) technologies are becoming increasingly important since they allow smaller sizes, lighter weight, lower costs, and higher efficiency of power electronics systems. For these innovative components, there are still many issues to be resolved regarding the lack of robustness and reliability. This arises from significant failure risks during manufacturing and consequently may form roadblocking obstacles on the way to the mass market. The complexity of highly integrated SiC and GaN devices requires an in-depth understanding of defect formation and degradation mechanisms as well as adapted failure analysis methodologies.

Share your experiences and advance the industry and your career at the 49th International Symposium for Testing and Failure Analysis, the premier event for the microelectronics failure analysis community. We invite you to submit your work for publication and to present to the industry in Phoenix, Arizona, for the 49th year of ISTFA.

Key Topics:

• AI Applications for Failure Analysis
• Boards and Systems
• Case Studies: Device Analysis
• Case Studies: FA Process and workflows
• Detecting and Preventing Counterfeit Microelectronics
• Die Level Fault Isolation
• Emerging FA Techniques and Concepts
• FIB Circuit Edit
• FIB Sample Preparation
• Hardware Security & Counterfeiting
• Microscopy Analysis and Material Characterization
• Nanoprobing and Electrical Characterization
• Package Level Fault Isolation
• Packaging and Assembly
• ESD/EOS Failure Analysis
• Power Devices (Si, SiC, GaN)
• Product Yield, Test and Diagnostics
• Sample Preparation and Device De-processing
• Scanning Probe Analysis
• System in Package and 3D Devices

Keynote Session

Dr. Peter Friedrichs, Vice President SiC Infineon

Tuesday, November 14 at 8:30 a.m.
Exhibit Halls – West Hall 1-2 – Industry Forum

Wide band gap power devices and related robustness and reliability aspects

Silicon carbide (SiC) devices offer many advantages, especially in power-conversion circuits for applications where efficiency is at a premium. These include solar inverters and electric vehicles, which may also be expected to remain in service for decades. For these applications, a combination of very high efficiency and long-term reliability is essential. The challenge in deploying SiC in such applications is that the technology is at an earlier stage of development than silicon. This means that the best ways of deploying SiC are still being explored, and that some failure modes unique to SiC devices still need to be better understood and more effectively mitigated. Infineon has been working on these issues for years and so has the insights and experience necessary to both help customers deploy SiC devices to their advantage, and to understand and mitigate their failure mechanisms to ensure the necessary reliability. The contribution will give insides into specific aspects regarding long term reliability and failure modes of sic power devices, taking into account application relevant mission profiles.