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Prototyping Atomistic Nanoscale Devices
Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks to Victory Atomistic’s combination of…
Learn How to Efficiently Achieve Accurate Experimental Etch Profiles in FinFET and Memory Applications with Victory Process
When employing process simulation to generate a complex device structure, TCAD engineers often face the task of reproducing the exact etch profile that has been observed in semiconductor fabrication. Silvaco…