Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices During SiC device switching operations, it is possible that… Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
We start by examining the different technologies used in the manufacturing of power devices, including Si, GaN, and SiC, considering their respective particularities and advantages. We will then analyze various approaches to the SPICE modeling… Power Devices SPICE Modeling for Si, GaN and SiC Technologies
Saving global resources by increasing energy efficiency is among the most significant problems that global society must address today. To achieve this, a major target is developing efficient and reliable power electronics devices for providing… ISTFA 2023
Silicon IGBT and SiC MOSFETs are today’s key power semiconductor switches for many power electronics converters such as those in automotive, renewables and industrial applications. Both device concepts continue to evolve, and development trends are… Learn How mqSemi AG Developed 3D Power Devices Proof of Concept with Silvaco TCAD Simulations