Are 2D-TMD-channel transistors suitable candidates for the replacement of silicon ? Considering the extreme scaling down to a few atomic layers of the FET channel, only an atomistic solution looks viable. In this context, we… Learn How to Simulate 2D-TMD-Channel FETs with Atomistic Precision
Memory products from Micron Technology, such as DRAM components and 3D NAND, are propelling the advancement of process technologies. Innovative modeling methods are required to tackle the complexities in fabricating structures and to evaluate process… Micron Utilizes Silvaco’s Fab Technology Co-Optimization for Development and Manufacturing of Memory Technologies
The common approach to optimize a fabrication process involves process and fab engineers creating and setting up Design of Experiments (DoEs) using a trial-and-error approach. This approach often leads to costly iterations since wafer fabrication… Applying Artificial Intelligence in Fab Technology Co-Optimization
The International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) provides an international forum for the presentation of leading-edge research and development in the area of process and device simulation. SISPAD is one of… SISPAD 2024
This webinar presents a comprehensive methodology for the design and optimization of a 1200V Silicon Carbide (SiC) Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (DMOS FET) utilizing Silvaco’s TCAD platform. Adhering to industry best practices, the construction of… Developing Silicon Carbide DMOSFETS: A Digital Twin Design Reference Flow
This webinar presents a comprehensive methodology for the design and optimization of a 1200V Silicon Carbide (SiC) Double-Diffused Metal-Oxide-Semiconductor Field-Effect Transistor (DMOS FET) utilizing Silvaco’s TCAD platform. Adhering to industry best practices, the construction of… Developing Silicon Carbide DMOSFETS: A Digital Twin Reference Flow
Get the latest on: TSMC’s industry-leading HPC, smartphone, IoT, and automotive platform solutions TSMC’s advanced technology progress on 5nm, 4nm, 3nm, 2nm processes and beyond TSMC’s specialty technology breakthroughs on ultra-low power, RF, embedded memory,… TSMC 2024 China Technology Symposium
he 14th CS International builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ensuring SiC’s Phenomenal Success; Expanding Horizons for Surface… CS Inernational Conference
Learn How STMicroelectronics Silicon Carbide (SiC) Research Team uses Silvaco TCAD to Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices During SiC device switching operations, it is possible that… Analyze the Impact of Surface Defect Dot on Short Circuit Phenomena in SiC Devices
