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Silvaco, September 8, 2022

Prototyping Atomistic Nanoscale Devices

Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks to Victory Atomistic’s combination of non-equilibrium Green’s functions (NEGF) and… Prototyping Atomistic Nanoscale Devices

Silvaco, August 11, 2022

Learn How to Efficiently Achieve Accurate Experimental Etch Profiles in FinFET and Memory Applications with Victory Process

When employing process simulation to generate a complex device structure, TCAD engineers often face the task of reproducing the exact etch profile that has been observed in semiconductor fabrication. Silvaco Victory Process offers several geometric… Learn How to Efficiently Achieve Accurate Experimental Etch Profiles in FinFET and Memory Applications with Victory Process