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Prototyping Atomistic Nanoscale Devices

August 19, 2022

Ultra-scaled Field-Effect Transistor (FET) technology requires simulations at the atomic scale for designing the most advanced technological architectures at 5 nm node and below. Thanks… Read More »Prototyping Atomistic Nanoscale Devices

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Prototyping Atomistic Nanoscale Devices

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Learn How to Efficiently Achieve Accurate Experimental Etch Profiles in FinFET and Memory Applications with Victory Process

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Victory

Prototyping Atomistic Nanoscale Devices

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Learn How to Efficiently Achieve Accurate Experimental Etch Profiles in FinFET and Memory Applications with Victory Process

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