Advancing Magnetic Memory Technology with Atomistic Modeling

In this event, experts from Martin-Luther-Universitat Halle Wittenberg, University of York, and Synopsys QuantumATK will present how to use ab initio DFT modeling and atomistic spin dynamics simulations of MTJs to guide and accelerate the technological development of magnetic memory such as STT and SOT-MRAM.

• Investigating the potential of novel magnetic tunnel junction (MTJ) materials and concepts for improved magnetic memory performance.
• Generating realistic MTJ structures with Machine-Learned Force Fields.
• Evaluating the performance based on calculated MTJ spintronic properties, such as tunnel magnetoresistance (TMR), current rectification, spin-transfer and spin-orbit torques (STT and SOT), Gilbert damping, Curie temp., and thermal stability.
• Gaining a deeper understanding of magnetization dynamics, STT and SOT switching mechanisms.

Speakers

Dr. Ersoy Sasioglu, Senior Research Scientist, Martin-Luther-Universitat Halle Wittenberg, Germany

Dr. Sasioglu will introduce a new MTJ concept based on novel half-metallic magnets and spin-gapless semiconducting Heusler compounds. The new MTJ concept exhibits a significant advantage due to the current rectification functionality and reconfigurable I-V characteristics, therefore showing potential for logic-in-memory computing. Proposed MTJ devices have been simulated with QuantumATK, realized experimentally, and patented.

Dr. Troels Markussen, Manager R&D, Synopsys QuantumATK
Dr. Markussen will present a study of investigating different capping layer materials in a double spin-torque MTJ for STT-MRAM.