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Advancing MRAM Technology with Atomistic Spin Dynamics Simulations
May 24 @ 9:00 am - 10:00 am PDT
In this event, experts from Martin-Luther-Universitat Halle Wittenberg, University of York, and Synopsys QuantumATK will present how to use ab initio DFT modeling and atomistic spin dynamics simulations of MTJs to guide and accelerate the technological development of magnetic memory such as STT and SOT-MRAM.
- Investigating the potential of novel magnetic tunnel junction (MTJ) materials and concepts for improved magnetic memory performance.
- Generating realistic MTJ structures with Machine-Learned Force Fields.
- Evaluating the performance based on calculated MTJ spintronic properties, such as tunnel magnetoresistance (TMR), current rectification, spin-transfer and spin-orbit torques (STT and SOT), Gilbert damping, Curie temp., and thermal stability.
- Gaining a deeper understanding of magnetization dynamics, STT and SOT switching mechanisms.
Dr. Richard Evans, Associate Professor, Developer of Vampire software, University of York, UK
Dr. Evans will talk about his group’s work on simulating MTJs with the atomistic spin dynamics code Vampire. He will put a particular focus on showing the capabilities of Vampire to investigate magnetization dynamics and reversal, STT and SOT switching mechanisms in MTJs for STT-SOT-MRAM, spin-torque nano oscillators, and antiferromagnets.
Dr. Troels Markussen, Manager R&D, Synopsys QuantumATK
Dr. Markussen will show the integration of Vampire into QuantumATK NanoLab GUI, making it easy to set up Vampire simulations with precalculated ab initio parameters, and analyze obtained results.